Infrared photodiode C30822EH

siliconPIN

Overview
The C30822EH is a Silicon PIN photodiode with a 5.0 mm active diameter chip housed in a hermetically sealed TO-8 package. It covers the 300 nm to 1100 nm spectral range and is available in photosensitive areas from 0.8 mm² to 100 mm².

Features & Benefits

• Silicon (Si) PIN photodiode
• TO-8 hermetically-sealed package
• 5.0 mm active diameter chip
• Anti-reflection coating optimized for 900 nm
• High responsivity
• Fast response time
• Low operating voltage
• Low capacitance
• Hermetically sealed construction
• RoHS compliant

Applications

• Laser detection systems
• Photometry
• Data transmission
• Instrumentation
• High-speed switching

Technical specifications

• Breakdown Voltage: >100 V
• Capacitance: 12 pF
• Dark Current: 50 nA / <250 nA
• Noise Current: 130 fW/√Hz
• Peak Wavelength: 900 nm
• Responsivity: 0.6 A/W (at 900 nm)
• Rise/Fall Time: <20 ns / <20 ns