Ionizing radiation photodiode C30626FH

wavelength-sensitiveavalanchesilicon

Description The large-area C30626FH silicon avalanche photodiode (Si APD) is supplied in a 5×5 mm flatpack package and provides a 25 mm² active area. It is designed for direct photon detection or optical coupling to scintillator crystals, offering a responsivity of 22 A/W at 900 nm, low dark current and fast response suitable for medical imaging and radiation detection equipment.

Key features

• Quantum efficiency optimized near 900 nm
• Low dark current (typ. 250 nA)
• Square 5×5 mm flatpack for straightforward coupling to scintillators
• Fast rise time for pulsed detection (≈5 ns)

Applications

• Nuclear medicine
• Fluorescence detection
• High-energy and particle physics instrumentation
• Medical imaging (scintillator-based detectors)
• Radiation detection and monitoring

Characteristics / Technical specifications

• Active area: 25 mm² (4.7 × 4.7 mm typical)
• Responsivity at 900 nm: 22 A/W
• Dark current: 250 nA (typical)
• Spectral noise density: 0.5 pA/√Hz
• Capacitance: 30 pF (100 µm effective thickness)
• Capacitance: 20 pF (200 µm effective thickness)
• Rise time: 5 ns
• N.E.P. at 900 nm: 23 fW/√Hz