Avalanche photodiode (APD) module C30956EH

Product Overview
The C30956EH large-area, long-wavelength enhanced silicon avalanche photodiode (Si APD) offers a 3 mm active-area diameter and high quantum efficiency at 1060 nm. Housed in a TO-8 package, the device uses a double-diffused reach-through structure to extend response beyond 900 nm without introducing undesirable characteristics.

Features & Benefits

• Active diameter 3 mm
• High quantum efficiency at 1060 nm
• Fast response time
• Wide operating temperature range
• Low capacitance
• Hermetically sealed packages
• RoHS compliant
• TEC option available

Applications

• Range finding
• LiDAR
• YAG laser detection

Technical specifications

• Responsivity: 45 A/W at 900 nm
• Responsivity: 25 A/W at 1050 nm
• Responsivity: 3.5 A/W at 1150 nm