Avalanche photodiode (APD) module C30737MH-500-90N

Product Overview
The C30737MH-500-90N Silicon Avalanche Photodiode (APD) offers a 500 µm active diameter and enhanced sensitivity near 900 nm in a leadless laminated carrier (LLC).

Key Features

• High responsivity across 500–1000 nm
• Low noise and very fast rise time at all wavelengths with frequency response above 380 MHz
• Active diameter 500 µm, optimized for peak sensitivity at 900 nm
• Leadless Laminated Carrier option "MH"

Applications

• LiDAR
• Laser range finding
• Security scanning
• Cost-sensitive applications requiring high-performance detectors

Technical specifications

• Active Diameter: 500 μm
• Peak Sensitivity Wavelength: 900 nm
• Breakdown Voltage (Vbd): 180–260 (binning available)
• Temperature Coefficient of Vop for Constant M: 1.3 V/°C
• Gain: 100 @ 900 nm
• Responsivity: 60 A/W at 800 nm
• Dark Current (Id): 0.1 to <1 nA
• Noise Current: 0.1 pA/√Hz
• Capacitance: 1 pF
• Rise/Fall Time: 0.9 ns (R load = 50 Ω)
• Cut-off Frequency: 380 MHz
• Storage Temperature: -50°C to +100°C
• Operating Temperature: -40°C to +85°C
• Package: 2 × 1.75 mm top-looking FR4 epoxy, leadless laminated carrier (LLC)