InGaAs photodiode C30617BFCH
wavelength-sensitiveinfraredPIN

InGaAs photodiode - C30617BFCH - Excelitas Technologies - PCO - wavelength-sensitive / infrared / PIN
InGaAs photodiode - C30617BFCH - Excelitas Technologies - PCO - wavelength-sensitive / infrared / PIN
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Characteristics

Type
InGaAs, wavelength-sensitive, infrared
Mounting
PIN

Description

Product Overview
The C30617BFCH is a high-speed InGaAs PIN photodiode featuring a 100 µm active-diameter chip in a TO-18 ball‑lens package with an FC receptacle. It offers high quantum efficiency across 800–1700 nm and combines low capacitance for extended bandwidth with high resistance for sensitive, linear and uniform response (≤2% variation) over the active area.

Features & Benefits:
  • High-speed InGaAs PIN photodiode
  • Package: TO-18 ball‑lens package with FC receptacle
  • 100 µm active diameter
  • High responsivity at 1300 nm and 1550 nm
  • Low capacitance enabling bandwidths up to 3.5 GHz

Applications:
  • Telecommunications and fiber‑optic links
  • Optical instrumentation and test equipment
  • High‑speed data transmission
  • High‑speed switching and photonic receivers

Technical Specifications
  • Breakdown Voltage: 100 V
  • Operating Voltage: 5 V
  • Capacitance: 0.45 pF
  • Dark Current: 1 nA
  • Noise Current: 0.02 pA/√Hz
  • Package: Ceramic carrier (TO-18 ball‑lens package with FC receptacle)
  • Active Diameter: 100 µm
  • Spectral Range / Quantum Efficiency: High quantum efficiency from 800 nm to 1700 nm; high responsivity at 1300 nm and 1550 nm
  • Responsivity: 0.90 A/W
  • Bandwidth / Rise-Fall Time: Low capacitance supporting bandwidths up to 3.5 GHz; Rise/Fall Time: < 0.5 ps

Catalogs

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Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall B4 - Stand 302

  • More information

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