Avalanche photodiode (APD) module C30902SH-TC

Product Overview
Excelitas C30902SH Avalanche Photodiodes (Si APDs) are high-speed, large-area silicon APDs offering high responsivity with low noise. They are optimized for use in Geiger mode (VOP > VBD) for single-photon detection or in Linear mode (VOP < VBD) with gains up to 250. The C30902SH-TC is designed for ultra-low light detection at optical powers < 1 pW and can achieve single-photon detection probabilities up to ~50% in Geiger mode. Options include built-in thermoelectric cooling (single-stage or dual-stage) for improved dark count and stability.

Features & Benefits

• 0.5 mm Si APD in TO-66 flange outline housing
• High quantum efficiency — 84% typical at 800 nm
• Extremely low noise at 0 °C
• High responsivity — internal avalanche gains > 250
• Spectral response range: 400 nm – 1100 nm
• Time response — typical 0.4 ns
• Wide operating temperature range: -40 °C to +85 °C
• Built-in TE-cooler option (single-stage cooler indicated by "-TC" suffix)

Key Performance Notes
Operable in linear mode at typical gains ≈250 or greater. In Geiger mode the device exhibits low, stable dark count rates and low afterpulsing; external amplification is not required for single-photon detection in many configurations.

Applications

• LiDAR / Time-of-Flight (ToF) systems
• Quantum communication and research
• Photon counting and single-photon detection
• Optical Time-Domain Reflectometry (OTDR)
• Laser scanning and ranging

Caractéristiques / Spécifications techniques

• Active Area: 0.2 mm²
• Active Diameter: 0.5 mm
• Breakdown Voltage: typ. 225 V
• Capacitance: typ. 1.5 pF
• Temperature Coefficient: typ. 0.7 V/°C
• Dark Current: 2 nA
• Dark Noise: 0.04 pA/√Hz
• Noise Equivalent Power: 0.29 fW/√Hz
• Typical Responsivity: 135 A/W at 800 nm
• Recommended Gain: 250
• Package: TO-66 flange outline