Avalanche photodiode (APD) module C30659-1550E-R08BH

Overview
The C30659 Series of InGaAs APD receivers integrates an InGaAs avalanche photodiode (APD) and a hybrid preamplifier in a hermetically sealed TO-8 package for ultra-low noise operation. The C30659-1550E-R08BH variant includes a C30645EH InGaAs APD optimized at 1550 nm with an 80 µm active area.

Design and performance
The series uses an inverting amplifier design with an emitter follower as the output buffer stage. The preamplifier front end employs a very low-noise GaAs FET optimized for higher transimpedance than the standard C30950 Series. InGaAs detectors provide strong response between 830 nm and 1550 nm and fast rise/fall times across wavelengths.

Key features

• Hybrid APD plus preamplifier in a hermetically sealed TO-8 package
• C30645EH InGaAs APD optimized for 1550 nm (used in this variant)
• 80 µm active area
• High damage threshold design

Applications
Sensors and optical detection systems requiring high sensitivity, ultra-low noise and fast response across near-infrared wavelengths, including operation around 1550 nm.

Technical specifications

• Part number: C30659-1550E-R08BH
• Series: C30659
• System bandwidth: 200 MHz
• NEP: 250 fW/√Hz at 1300 nm; 220 fW/√Hz at 1550 nm
• Spectral response: peak at 1550 nm (good response between 830 nm and 1550 nm)
• Typical power consumption: 150 mW
• Amplifier supply: ±5 V
• 50 Ω AC load capability (AC coupled)
• Package: hermetically sealed TO-8
• Preamplifier front end: very low-noise GaAs FET