Wavelength-sensitive photodiode C30737MH-500-80N

siliconLIDARavalanche

Product Overview: The C30737MH-500-80N silicon avalanche photodiode (APD) provides a 500 µm active diameter with enhanced sensitivity at 800 nm. Supplied in a leadless laminated carrier (LLC) in a top-looking 2 × 1.75 mm FR4 epoxy package, it is suited for high-speed optical detection.

Key Features:

• High responsivity across 500–1000 nm, optimized for 800 nm
• Low noise with very fast rise/fall times and >1.3 GHz bandwidth
• Gain ~100 at 800 nm
• Leadless Laminated Carrier option "MH", top-looking package

Applications:

• LiDAR and laser ranging systems
• Laser detection and measurement instruments
• Security and scanning detectors
• Cost-sensitive, high-performance optical detection

Specifications:

• Active diameter: 500 μm
• Peak sensitivity wavelength: 800 nm
• Breakdown voltage (Vbd): 120–210 V (binning available)
• Temperature coefficient of Vop (constant M): 0.5 V/°C
• Gain: 100 @ 800 nm
• Responsivity: 50 A/W @ 800 nm
• Dark current (Id): <1 nA
• Noise current: 0.1 pA/√Hz
• Capacitance: 2 pF
• Rise/fall time: 0.3 ns (Rload = 50 Ω)
• Cut-off frequency: 1.3 GHz
• Storage temperature: -50°C to +100°C
• Operating temperature: -40°C to +85°C
• Package: 2 × 1.75 mm top-looking FR4 epoxy, leadless laminated carrier (LLC)