Infrared photodiode YAG-444

siliconwavelength-sensitivePIN

Overview Excelitas Technologies' YAG series of Silicon PIN detectors are high-performance N- or P-type Si PIN photodiodes supplied in hermetically sealed TO packages. The large active area and guard-ring design make them suitable for both position sensing and power detection in laboratory and industrial laser applications.

Performance These photodiodes deliver reliable responsivity across the 400 nm to 1100 nm wavelength range, with enhanced infrared response optimized for 1064 nm detection. The guard ring collects current generated outside the active area to prevent excess noise contribution. The large 11.3 mm active diameter enables accurate measurement from focused or defocused spots in both pulsed and CW operating modes.

Key Features and Benefits

• High quantum efficiency at 1064 nm
• Hermetic TO-5 / TO-36 package options
• Available in N-type and P-type configurations
• Active diameter: 11.3 mm (active area 100 mm²)

Technical specifications

• Active diameter (mm): 11.3
• Active area (mm²): 100
• Typical capacitance (pF): 35
• Typical responsivity at 900 nm (A/W): 0.60
• Typical responsivity at 1064 nm (A/W): 0.44
• Typical responsivity at 1064 nm for -AR suffix (A/W): 0.47
• Typical rise time, 50Ω load (ns): 12
• Maximum operating voltage (V): 180
• Minimum breakdown voltage (V): 200
• Typical dark current (nA): 80
• Maximum dark current (nA): 200
• Typical noise current (pA/√Hz): 0.16
• Noise equivalent power (NEP) at 1064 nm (pW/√Hz): 0.23
• Package: TO-36 custom
• Storage temperature range (℃): -55 to 125
• Operating temperature range (℃): -55 to 125