Avalanche photodiode (APD) module C30662 series

Overview
The Excelitas C30662 Series comprises large-area InGaAs avalanche photodiodes (APDs) with a 200 µm active area, optimized for detection across 1000–1700 nm. These APDs deliver high quantum efficiency and responsivity with low intrinsic noise. Available in hermetic TO-18, TO-46, ceramic carrier and SMD packages to support laboratory, OEM and high-volume production integration.

Performance and Applications
High bandwidth and low-noise options enable improved signal-to-noise ratios for LiDAR, eye-safe rangefinding and coherent OTDR. Enhanced low-noise variants extend detection range for Raman-scatter sensing and improve sensitivity in distributed fiber sensing (DTS, DAS). Suitable for OEM systems requiring stable operating gain and fast response times.

Series Models (model / package type / window material / window aperture / comments)
C30662ECERH / Ceramic Carrier / N/A / N/A / (no comment)
C30662ECERH-1 / Ceramic Carrier / N/A / N/A / ΔV > 4 V
C30662EH / TO-18, 2 pin / Glass / Large / (no comment)
C30662EH-1 / TO-18, 2 pin / Glass / Large / ΔV > 4 V
C30662EH-2 / TO-46, 3 pin / Glass / Large / 3. ground pin
C30662EH-137 / TO-18, 2 pin / Glass (for some EH variants) / Small / low noise, ΔV > 4 V
C30662EH-3 / TO-18, 2 pin / (not specified) / Small / (no comment)
C30662EH-5 / TO-18, 2 pin / Silicon / Small / (no comment)
C30662EH-7 / TO-46, 3 pin / Glass / Large / low noise
C30662EH-27 / TO-46, 3 pin / Glass / Large / low noise, 3. ground pin
C30662L-200 / SMD / N/A / N/A / (no comment)
C30662L-200-1 / SMD / Silicon / N/A / (no comment)
C30662L-200-7 / SMD / Glass / N/A / low noise
C30662L-200-17 / SMD / Silicon / N/A / (no comment)

Electrical / Optical Parameters (selected)
Rise/Fall time: t_r / t_f = 0.4 ns (max)
Bandwidth (−3 dB): typ. 600 MHz, max. 850 MHz
Capacitance: standard typ. 2.5 pF, SMD typ. 2.7 pF
Dark current: standard typ. 13 nA (max 35 nA); low-noise typ. 7.5 nA (max 15 nA)
Dark noise (i_N): standard typ. 0.45 pA/√Hz (max 1 pA/√Hz); low-noise typ. 0.35 pA/√Hz (max 0.5 pA/√Hz)
NEP (Noise Equivalent Power): standard typ. 48 fW/√Hz (max 106 fW/√Hz); low-noise typ. 37 fW/√Hz (max 53 fW/√Hz)
Operating gain (M): typ. 10, max. 20
Breakdown voltage (V_BD): min 45 V, typ 50 V, max 70 V; Operating point from breakdown (ΔV): typ. 4 V
Spectral range: 1000–1700 nm; Quantum efficiency: typ. ~75%
Responsivity @1550 nm: typ. ~9.3 A/W; Temperature coefficient of V_BD: typ. 0.14 V/°C (max 0.2 V/°C)

Notes
Note 1: Glass windows transmit visible and IR; silicon windows block visible light below ≈1.1 µm.
Note 2: Some windows are AR-coated to reduce reflections.

Technical specifications

• Active area: 200 µm
• Spectral range: 1000 nm – 1700 nm
• Quantum efficiency: ~75% (typical)
• Responsivity at 1550 nm: ~9.3 A/W (typical)
• Bandwidth (−3 dB): typical 600 MHz, up to 850 MHz
• Rise/Fall time: typ/max ~0.4 ns
• Operating gain (M): typical 10, up to 20
• Breakdown voltage (VBD): 45 – 70 V (typical 50 V)
• Operating point from breakdown (ΔV): ~4 V
• Capacitance (standard): ~2.5 pF; SMD: ~2.7 pF
• Dark current (standard): typ. 13 nA, max 35 nA; low-noise variants: typ. 7.5 nA, max 15 nA
• Dark noise (standard): 0.45 – 1 pA/√Hz; low-noise: 0.35 – 0.5 pA/√Hz
• NEP standard: typ. 48 fW/√Hz, max 106 fW/√Hz; low-noise: typ. 37 fW/√Hz, max 53 fW/√Hz
• Package options: TO-18 (2 pin), TO-46 (3 pin), ceramic carrier, SMD
• Window options: Glass (AR-coated), Silicon, or N/A (depending on package)
• Variants optimized for LiDAR, OTDR, DTS, DAS and eye-safe ranging