Avalanche photodiode C30884EH

silicon

Product overview
The C30884EH silicon avalanche photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall-time characteristic has no 'tail', the device responsivity is independent of modulation frequency up to approximately 400 MHz. The detector uses a double-diffused 'reach-through' structure and is optimized for high responsivity at wavelengths below 1000 nm. Active diameter: 1 mm.

Package
The C30884EH is hermetically sealed behind a flat glass window in a modified low-profile TO-5 package.

Applications

• Optical communications
• Laser range finding
• High-speed switching systems

Specifications

• Responsivity: 85% typical at 900 nm
• Responsivity: 10% typical at 1060 nm
• Device type: Silicon avalanche photodiode (Si APD)
• Active area / diameter: 1 mm (from product title)
• Package type: modified low-profile TO-5, hermetically sealed behind flat glass window
• Structure: double-diffused 'reach-through'
• High modulation capability; responsivity independent of modulation frequency up to ~400 MHz due to no fall-time 'tail'
• Optimized for wavelengths below 1000 nm