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Infrared photodiode C30737PH-230-90NavalanchesiliconLIDAR
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Characteristics
- Type
- infrared, avalanche, silicon, LIDAR, wavelength-sensitive
Description
Product Description
The C30737PH-230-90N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230 µm and enhanced 900 nm response in a Plastic T 1¾ package.
Key Features:
Applications:
Caractéristiques / spécifications techniques:
The C30737PH-230-90N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 230 µm and enhanced 900 nm response in a Plastic T 1¾ package.
Key Features:
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise times at all wavelengths with a frequency response above 380MHz
- Active diameter of 230μm and optimized for 900 nm peak sensitivity
- Plastic T 1-3/4 option "PH"
Applications:
- LiDAR
- Laser-range finding
- Security scanning
- Applications requiring a low-cost, high-performing detector
Caractéristiques / spécifications techniques:
- Active Diameter: 230μm
- Peak Sensitivity Wavelength: 900 nm
- Breakdown Voltage Vbd: 180-260
- Temperature Coefficient of Vop for Constant M: 1.3 V/°C
- Gain: 100 @900nm
- Responsivity: 60 A/W at 800 nm
- Dark Current Id: 0.05 <0.5 nA
- Noise Current: 0.1 pA/√Hz
- Capacitance: 0.6 pF
- Rise/Fall Time: 0.9 ns R load = 50Ω
- Cut-off Frequency: 380 MHz
- Storage Temp: -50°C to +100°C
- Operating Temp: -40°C to +85°C
- Package: Plastic T 1¾ through-hole
Catalogs
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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