Silicon photodiode C30902EH

avalancheinfraredLIDAR

Overview
Excelitas C30902EH avalanche photodiodes are high-speed, large-area silicon reach-through APDs designed for low-light applications requiring typical gains greater than 100. Packaged in modified TO-18 housings with a flat glass window, available in several TO-18 configurations (flat glass, ball lens, light pipe and 905 nm filter). The useful diameter of the photosensitive surface is 0.5 mm.

Key details
The C30902EH series is fabricated with a double-diffused "reach-through" structure providing high responsivity between 400 nm and 1000 nm and extremely fast rise and fall times. The responsivity is independent of modulation frequency up to typically 800 MHz. The detector chip is hermetically sealed behind a flat glass window in a modified TO-18 package. The family also includes a Single Photon capable APD (SPAD) variant (C30902SH) operable in Geiger and linear modes.

Features & Benefits

• 0.5 mm Si APD in TO-18 housing
• High quantum efficiency – 84% typical at 800 nm
• Low noise at room temperature
• High responsivity – internal avalanche gains >150
• Spectral response range – 400 to 1100 nm
• Time response – typically 0.4 ns
• Wide operating temperature range -40°C to +85°C

Applications

• LiDAR / Time-of-Flight (ToF) measurements
• Optical Time-domain Reflectometer (OTDR)
• Small-signal fluorescence
• Laser scanning

Technical specifications

• Active Area: 0.2 mm²
• Active Diameter: 0.5 mm
• Breakdown Voltage: Typ. 225 V
• Capacitance: 1.5 pF
• Temperature Coefficient: Typ. 0.7 V/°C
• Dark Current: 7 nA
• Dark Noise: 0.1 pA/√Hz
• Noise Equivalent Power: 1.23 fW/√Hz
• Typical Responsivity: 80 A/W at 800 nm
• Recommended Gain: 150
• Package: TO-18, flat window