Infrared photodiode C30737LH-500-83N

avalanchesiliconwavelength-sensitive

Product Overview
The C30737LH-500-83N Silicon Avalanche Photodiode (Si APD) features a 500 µm active diameter with enhanced response at 800 nm and a 650 nm optical bandpass filter. Supplied in a leadless ceramic carrier (LCC) option 'LH', it is intended for compact OEM integration where narrowband sensitivity and fast temporal response are required.

Key Features

• High responsivity with integrated 650 nm bandpass filter
• Low noise and fast rise time across wavelengths; frequency response above 1.3 GHz
• Large 500 µm active diameter optimized for near-infrared operation (800 nm)
• Leadless ceramic carrier (LCC) option 'LH' for compact mounting
• Gain ~100 at 650 nm, high responsivity (35 A/W at 650 nm)

Applications

• LiDAR and time-of-flight sensing
• Laser range finding and telemetry
• Security and scanning systems
• OEM detectors for cost-sensitive, high-performance photon detection

Technical specifications

• Active diameter: 500 µm
• Peak sensitivity wavelength: 650 nm
• Breakdown voltage Vbd: 120–210 V (binning available)
• Temperature coefficient of Vop for constant M: 0.5 V/°C
• Gain: 100 @ 650 nm
• Responsivity: 35 A/W at 650 nm
• Dark current Id: <1 nA (typ. 0.1 nA)
• Noise current: 0.1 pA/√Hz
• Capacitance: 2 pF
• Rise/Fall time: 0.3 ns (Rload = 50 Ω)
• Cut-off frequency: 1.3 GHz
• Storage temperature: -50 °C to +100 °C
• Operating temperature: -40 °C to +85 °C
• Package: 3 × 3 mm glass window, leadless ceramic carrier (LCC)
• Window: 650 nm filter