Silicon photodiode C30808EH

PIN

Product Overview
The C30808EH is a silicon PIN photodiode with a 2.5 mm active diameter chip in a hermetically sealed TO-5 package, designed for the 300–1100 nm wavelength range. The product series offers photosensitive surface areas from 0.8 mm² to 100 mm².

Features & Benefits

• 2.5 mm active diameter chip
• Anti-reflection coating to improve responsivity at 900 nm
• Low operating voltage
• TO-5 hermetically sealed package
• RoHS compliant

Applications

• Laser detection systems
• Photometry
• Data transmission
• Instrumentation
• High-speed switching

Specifications (table)
Breakdown Voltage: >100 V
Capacitance: 5 pF
Dark Current: 30 nA / <150 nA @ Vop
Responsivity: 0.6 A/W at 900 nm
Rise/Fall Time: <20 / <20 ns

Technical specifications

• Active diameter: 2.5 mm
• Wavelength range: 300–1100 nm
• Package: Hermetically sealed TO-5
• Photosensitive surface area range (series): 0.8 mm² to 100 mm²
• Breakdown Voltage: >100 V
• Capacitance: 5 pF
• Dark Current: 30 nA / <150 nA @ Vop
• Responsivity: 0.6 A/W at 900 nm
• Rise/Fall Time: <20 ns / <20 ns
• Anti-reflection coating to enhance responsivity at 900 nm
• Low operating voltage
• RoHS compliant