Product descriptionThe C30618L-350 is a high-speed InGaAs PIN photodiode featuring a 350 µm active diameter chip housed in a ceramic SMD package with a window. It delivers high quantum efficiency across the 960 nm to 1700 nm range, with low capacitance for extended bandwidth and high shunt resistance for sensitivity, linearity and uniformity within 2% across the active area.
Applications- High-volume consumer optoelectronic products
- Telecommunication receivers
- Instrumentation and test equipment
- High-speed optical switches
- Optical time reference for laser rangefinders
- LiDAR systems
Features & Benefits- High bandwidth up to 3.5 GHz
- High responsivity at 1300 nm and 1550 nm
- Active area diameter: 350 µm
- Low capacitance (Typ. 4.0 pF)
- Compact ceramic SMD package with window
- Possible customizations (e.g. optical filters)
- RoHS compliant
Technical specifications- Breakdown Voltage: 60 V
- Operating voltage: 5 V
- Capacitance: Typ. 4.0 pF
- Dark Current: Typ. <1.0 nA
- Dark Noise: Typ. <0.08 pA/√Hz
- Package: Ceramic SMD with window
- Active diameter: 350 µm
- Quantum efficiency / spectral range: high QE from 960 nm to 1700 nm
- Responsivity: Typ. 1.05 A/W @ 1550 nm
- High responsivity at 1300 nm and 1550 nm
- Rise/Fall Time: Typ. 0.5 ns
- High bandwidth up to 3.5 GHz
- High shunt resistance for high sensitivity, linearity and uniformity within 2% across the active area