QPD photodiode YAG-444-4

quadrantinfraredsilicon

Product Overview
The YAG-444-4 series are silicon PIN quadrant photodiodes in hermetically sealed TO packages designed for position sensing and 1064 nm detection applications. Available in N-type and P-type configurations, these devices feature a guard ring to collect peripheral current and a large active diameter for accurate position measurements with focused or defocused beams in pulsed or CW operation.

Key Features

• High quantum efficiency at 1064 nm
• Crosstalk <1% between elements
• No dead zones between quadrants (P-type)
• Hermetic TO-can package (TO-36 custom)
• Available N- and P-type, optional heater (-H) and anti-reflection coating (-AR / -ARH)

Representative Images
Product images and spectral responsivity plots are provided on the product page.

Technical specifications

• Number of elements: 4
• Active diameter (mm): 11.3
• Active area per element (mm²): 25
• Typical capacitance per quadrant (pF): 12
• Typical responsivity at 900 nm (A/W): 0.60
• Typical responsivity at 1064 nm (A/W): 0.44
• Typical responsivity at 1064 nm for -AR and -ARH suffix (A/W): 0.47
• Typical rise time, 50Ω load (ns): 12
• Maximum operating voltage (V): 180
• Minimum breakdown voltage (V): 200
• Typical capacitance per element (pF): 9
• Maximum capacitance per element (pF): 15
• Typical dark current per element (nA): 30
• Maximum dark current per element (nA): 100
• Typical noise current per element (pA/√Hz): 0.20
• NEP at 900 nm per element (pW/√Hz): 0.25
• NEP at 1064 nm per element (pW/√Hz): 0.30
• Heater resistance at 25°C (-H suffix) (kΩ): 10 ± 2
• Heater peak power (-H suffix) (W): 16.1
• Maximum heater DC voltage (-H suffix) (V): 24
• Package: TO-36 custom
• Storage temperature range (°C): -55 to 125
• Operating temperature range (°C): -55 to 125
• Operating temperature range for -H suffix (°C): -40 to 85
• Maximum heater voltage (V): 12