Wavelength-sensitive photodiode C30807EH

siliconPIN

Product Overview
The C30807EH is an N-type silicon PIN photodiode featuring a 1.0 mm active diameter chip housed in a hermetically-sealed TO-18 package. It is suitable for optical detection across the 300 nm to 1100 nm wavelength range and is part of a series offering photosensitive areas from 0.8 mm² to 100 mm².

Features & Benefits:

• High responsivity (typ. 0.6 A/W at 900 nm)
• Fast rise/fall times (<5 / <10 ns)
• Low operating voltage and low dark current
• Low capacitance (2.5 pF)
• Hermetically sealed TO-18 package for stable performance
• RoHS compliant

Applications:

• Laser detection and monitoring systems
• Photometric and light measurement instruments
• Optical data transmission receivers
• Precision instrumentation and sensing
• High-speed optical switching

Specifications (typical):
Breakdown Voltage: >100 V
Capacitance: 2.5 pF
Dark Current: 10 nA / <50 nA
Noise Current: 60 fW/√Hz
Peak Wavelength: 900 nm
Responsivity: 0.6 A/W at 900 nm
Rise/Fall Time: <5 ns / <10 ns

Characteristics / Technical Specifications

• Device type: N-type silicon PIN photodiode
• Active diameter: 1.0 mm
• Package: Hermetically-sealed TO-18
• Wavelength range: 300 nm to 1100 nm
• Series photosensitive area range: 0.8 mm² to 100 mm²
• RoHS compliant