Infrared photodiode C30737LH-230-90N

avalanchesiliconLIDAR

Product overview
The C30737LH-230-90N is a silicon avalanche photodiode (Si APD) with a 230 µm active diameter in a leadless ceramic carrier (LCC). It features enhanced responsivity at 900 nm, low noise and a fast frequency response, making it suitable for compact, high-speed optical detection systems.

Key features

• Enhanced responsivity around 900 nm with broad response from 500 to 1000 nm
• Low dark noise and fast rise time with cutoff frequency above 380 MHz
• Active diameter: 230 µm; optimized for 900 nm peak sensitivity
• Leadless ceramic carrier (LCC) package with 3×3 mm glass window

Applications

• LiDAR and range-finding systems
• Laser-range finders and distance sensors
• Security and scanning instrumentation
• Cost-sensitive high-performance detector modules

Technical specifications

• Active diameter: 230 µm
• Peak sensitivity wavelength: 900 nm
• Breakdown voltage (Vbd): 180–260 V (binning available)
• Temperature coefficient of Vop for constant M: 1.3 V/°C
• Gain: 100 @ 900 nm
• Responsivity: 60 A/W @ 900 nm
• Dark current (Id): typ. 0.05 nA, max <0.5 nA
• Noise current: 0.1 pA/√Hz
• Capacitance: 0.6 pF
• Rise/Fall time: 0.9 ns (R_load = 50 Ω)
• Cutoff frequency: 380 MHz
• Storage temperature: -50 °C to +100 °C
• Operating temperature: -40 °C to +85 °C
• Package: 3×3 mm glass window, leadless ceramic carrier (LCC)
• Window: standard