Silicon photodiode C30737PH-230-80N

LIDARavalanche

Overview
The C30737PH-230-80N Silicon Avalanche Photodiode (Si APD) offers an active diameter of 230 µm and enhanced 800 nm response in a plastic T 1¾ through-hole package.

Key Features

• High responsivity between 500 and 1000 nm
• Low noise and extremely fast rise time at all wavelengths with a frequency response above 1.5 GHz
• Active diameter of 230 μm and optimized for 800 nm peak sensitivity
• Plastic T1¾ option "PH"

Applications

• LiDAR
• Laser-range finding
• Security scanning
• Applications requiring a low-cost, high-performing detector

Specifications (table)
Active Diameter : 230μm
Peak Sensitivity Wavelength : 800 nm
Breakdown Voltage Vbd : 120-210 (binning available)
Temperature Coefficient of Vop for constant M : 0.5 V/°C
Gain : 100 @800nm
Responsivity : 50 A/W at 800 nm
Dark Current Id : 0.05 <0.5 nA
Noise Current : 0.1 pA/√Hz
Capacitance : 1 pF
Rise/Fall Time : 0.2 ns R load = 50Ω
Cut-off frequency : 1.5 GHz
Storage Temp : -50°C to +100°C
Operating Temp : -40°C to +85°C
Package : Plastic T 1-3/4 through hole

caractéristiques / spécifications techniques

• Active Diameter: 230 μm
• Peak Sensitivity Wavelength: 800 nm
• Breakdown Voltage Vbd: 120-210 (binning available)
• Temperature Coefficient of Vop for constant M: 0.5 V/°C
• Gain: 100 @800 nm
• Responsivity: 50 A/W at 800 nm
• Dark Current Id: 0.05 <0.5 nA
• Noise Current: 0.1 pA/√Hz
• Capacitance: 1 pF
• Rise/Fall Time: 0.2 ns (R load = 50Ω)
• Cut-off frequency: 1.5 GHz
• Storage Temp: -50°C to +100°C
• Operating Temp: -40°C to +85°C
• Package: Plastic T 1-3/4 through hole