Quadrant photodiode C30927EH-03

siliconwavelength-sensitiveQPD

Product description
The C30927EH-03 quadrant silicon avalanche photodiode features a double-diffused reach-through structure with a 1.55 mm useful diameter. The quadrant design uses a common avalanche junction and separates quadrants by segmenting the light-entry p+ surface opposite the junction, eliminating dead space between elements and preserving on-axis response. The device is optimized for 800 nm operation and delivers high responsivity and fast response when used within ±50 nm of the nominal wavelength.

Key features

• Full angle for totally illuminated photosensitive surface greater than 90°
• High quantum efficiency optimized for 800 nm
• Fast time response (typical rise/fall: 3 ns)
• Large active area: 1.77 mm²
• Hermetically sealed, low-profile TO-8 package

Applications

• Tracking
• Alignment
• Friend-or-foe identification

Technical characteristics / specifications

• Breakdown voltage range (V): 350 to 485
• Typical breakdown voltage (V): 425
• Typical gain (M): 100
• Typical temperature coefficient for constant gain (V/°C): 2.4
• Minimal responsivity at 800 nm (A/W): 45
• Typical responsivity at 800 nm (A/W): 55
• Typical total dark current (nA): 100
• Maximum total dark current (nA): 200
• Typical noise current per element (pA/√Hz): 1.0
• Maximum noise current per element (pA/√Hz): 1.5
• Typical total capacitance of all quadrants (pF): 3
• Maximum total capacitance of all quadrants (pF): 5
• Maximum series resistance (Ω): 15
• Typical rise and fall time (ns): 3
• Storage temperature (°C): -60 to 120
• Operating temperature (°C): -40 to 60