Avalanche photodiode C30737MH-230-90N

LIDARtop viewwavelength-sensitive

Product overview
The C30737MH-230-90N silicon avalanche photodiode (Si APD) features a 230 µm active diameter and is optimized for enhanced response at 900 nm. It is supplied in a leadless laminated carrier (LLC) with MH option for compact top-looking integration.

Key features

• High responsivity across 500–1000 nm, optimized at 900 nm
• Low noise and very fast rise times with frequency response above 380 MHz
• 230 µm active diameter for efficient light collection
• Leadless laminated carrier option 'MH' for compact mounting

Applications

• LiDAR systems
• Laser range finding
• Security and scanning equipment
• Cost-sensitive detection applications requiring high performance

Technical specifications

• Active Diameter: 230 µm
• Peak Sensitivity Wavelength: 900 nm
• Breakdown Voltage (Vbd): 180–260 V (binning available)
• Temperature Coefficient of Vop for Constant M: 1.3 V/°C
• Gain: 100 @ 900 nm
• Responsivity: 60 A/W at 900 nm
• Dark Current (Id): typ. 0.05 nA, max <0.5 nA
• Noise Current: 0.1 pA/√Hz
• Capacitance: 0.6 pF
• Rise/Fall Time: 0.9 ns (Rload = 50 Ω)
• Cut-off Frequency: 380 MHz
• Storage Temperature: -50 °C to +100 °C
• Operating Temperature: -40 °C to +85 °C
• Package: 2 x 1.75 mm top-looking FR4 epoxy, leadless laminated carrier (LLC)