Avalanche photodiode (APD) module C30659-1060E-R8BH

Product Overview
The C30659-1060E-R8BH is a silicon Avalanche Photodiode (Si APD) receiver with an integrated hybrid preamplifier in a hermetically-sealed TO-8 package. The device uses a C30954EH Si APD optimized at 1060 nm with a 0.8 mm active diameter, providing low-noise detection and an emitter-follower output buffer for signal conditioning.

Performance and Design Details
The module integrates a very low-noise GaAs FET front end preamplifier and an inverting amplifier topology. APD elements in the family (C30954EH and others) deliver strong responsivity across the 400–1100 nm range with noted performance up to 1550 nm for related detectors. The preamplifier is designed for higher transimpedance than the standard C30950 series, enabling fast rise/fall times and operation at system bandwidths up to 200 MHz.

Specifications

• Series: C30659 series
• Part number: C30659-1060E-R8BH
• APD element: C30954EH (Silicon APD), optimized wavelength 1060 nm
• Active diameter: 0.8 mm
• System bandwidth: 200 MHz
• NEP: 55 fW/√Hz @ 900 nm; 100 fW/√Hz @ 1064 nm
• Spectral response: 400–1100 nm (family shows good response 830–1550 nm)
• Preamplifier: Hybrid preamplifier with very low-noise GaAs FET front end
• Amplifier topology: Inverting amplifier with emitter-follower output buffer
• Operating voltages: ±5 V
• Output load capability: 50 Ω (AC-coupled)
• Typical power consumption: 150 mW
• Package: Hermetically-sealed TO-8