Avalanche photodiode (APD) module C30659-1060-3AH

Overview The C30659-1060-3AH is a silicon avalanche photodiode (Si APD) receiver with a hybrid preamplifier integrated in a hermetically sealed TO-8 package. It incorporates a C30956EH Si APD optimized at 1060 nm and features a 3 mm active diameter, providing ultra-low noise performance for high-sensitivity optical detection.

Amplifier and detector details The device uses an inverting amplifier architecture with an emitter-follower output buffer. The Si APD is the same type used in Excelitas C30817EH, C30902EH, C30954EH and C30956EH products. The preamplifier front end employs a very low-noise GaAs FET designed for higher transimpedance compared with the standard C30950 Series. These detectors exhibit good response across the silicon spectral range and fast rise/fall times.

Features

• Silicon avalanche photodiode (Si APD) with hybrid preamplifier
• Hermetically sealed TO-8 package
• 3 mm active diameter (C30659-1060-3AH with C30956EH APD)
• Ultra-low noise operation suitable for sensitive detection

Technical specifications

• System bandwidth: 50 MHz
• Noise equivalent power (NEP): 55 fW/√Hz at 900 nm; 90 fW/√Hz at 1064 nm
• Spectral response: 400 to 1100 nm, optimized at 1060 nm
• Typical power consumption: 150 mW
• Amplifier operating voltages: ±5 V
• 50 Ω AC load capability (AC-coupled)
• Hermetically sealed TO-8 package
• High reliability and OEM compatibility

Applications

• Scientific instrumentation and laboratory detection
• Laser-based measurement and LIDAR
• Fiber-optic testing and sensing
• OEM integration in photonics systems