Product OverviewThe C30737LH-500-90N silicon avalanche photodiode (APD) provides a 500 µm active diameter with enhanced response around 900 nm. Supplied in a leadless ceramic carrier (LCC) with the "LH" option, it is designed for fast, low-noise detection in compact packages.
Key Features- High responsivity across 500–1000 nm, optimized near 900 nm
- Low noise and fast rise time with frequency response > 380 MHz
- 500 µm active diameter for higher collection area
- Available in leadless ceramic carrier option "LH"
Applications- LiDAR systems
- Laser range-finding
- Security and scanning detectors
- Cost-sensitive, high-performance detection applications
Technical specifications- Active Diameter: 500 µm
- Peak Sensitivity Wavelength: 900 nm
- Breakdown Voltage Vbd: 180–260 V (binning available)
- Temperature Coefficient of Vop for Constant M: 1.3 V/°C
- Gain: 100 @ 900 nm
- Responsivity: 60 A/W at 900 nm
- Dark Current Id: <1 nA (0.1 indicated)
- Noise Current: 0.1 pA/√Hz
- Capacitance: 1 pF
- Rise/Fall Time: 0.9 ns (R load = 50 Ω)
- Cut-off Frequency: 380 MHz
- Storage Temperature: -50 °C to +100 °C
- Operating Temperature: -40 °C to +85 °C
- Package: 3 × 3 mm glass window, Leadless Ceramic Carrier (LCC)
- Window: Standard window