Avalanche photodiode (APD) module C30927EH-02

Product Description
The C30927EH-02 quadrant silicon avalanche photodiode with 1.55 mm useful diameter features a double-diffused "reach-through" structure. The quadrant design uses a common avalanche junction with quadrant separation achieved by segmentation of the light-entry p+ surface opposite the junction, eliminating dead space between elements and preserving on-axis response. The device is optimized for operation at 900 nm and delivers high responsivity when used within approximately ±50 nm of the specified wavelength.

Key Features

• Full angle for totally illuminated photosensitive surface greater than 90°
• High quantum efficiency optimized for 900 nm operation
• Fast time response
• Large active area: 1.77 mm²
• Hermetically sealed low-profile TO-8 package

Applications

• Tracking
• Alignment
• "Friend or Foe" identification

Technical specifications

• Breakdown voltage range (V): 350 to 485
• Typical breakdown voltage (V): 425
• Typical gain (M): 100
• Typical temperature coefficient for constant gain (V/°C): 2.4
• Minimal responsivity at 900 nm (A/W): 50
• Typical responsivity at 900 nm (A/W): 62
• Typical total dark current (nA): 100
• Maximal total dark current (nA): 200
• Typical noise current per element (pA/√Hz): 1.0
• Maximal noise current per element (pA/√Hz): 1.5
• Typical total capacitance of all quadrants (pF): 3
• Maximal total capacitance of all quadrants (pF): 5
• Maximal series resistance (Ω): 15
• Typical rise and fall time (ns): 3
• Storage temperature (°C): -60 to 120
• Operating temperature (°C): -40 to 60