Infrared photodiode YAG-200-4
siliconquadrantQPD

Infrared photodiode - YAG-200-4 - Excelitas Technologies - PCO - silicon / quadrant / QPD
Infrared photodiode - YAG-200-4 - Excelitas Technologies - PCO - silicon / quadrant / QPD
Infrared photodiode - YAG-200-4 - Excelitas Technologies - PCO - silicon / quadrant / QPD - image - 2
Infrared photodiode - YAG-200-4 - Excelitas Technologies - PCO - silicon / quadrant / QPD - image - 3
Infrared photodiode - YAG-200-4 - Excelitas Technologies - PCO - silicon / quadrant / QPD - image - 4
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Characteristics

Type
infrared, silicon, quadrant, QPD
Mounting
PIN

Description

Product description
Excelitas Technologies' YAG-200-4 series Silicon PIN quadrant detectors are N- or P-type Si PIN photodiodes supplied in hermetically sealed TO packages. They deliver reliable response across 400 nm–1100 nm with enhanced infrared responsivity optimized for 1064 nm detection. A guard ring collects current generated outside the active area to prevent contribution to noise. The large active area supports accurate position sensing from both focused and defocused spots in pulsed or CW operation.

Key Features
  • High quantum efficiency at 1064 nm
  • Crosstalk <1% between elements
  • No "dead zones" between quadrants (P-type option)
  • Package style: hermetic TO-can / TO-8 custom
  • Available in N- and P-type; optional anti-reflection coating (-AR) and heater (-H)


Technical specifications
  • Number of elements: 4
  • Active diameter: 5.1 mm
  • Active area per element: 5.1 mm²
  • Typical capacitance per quadrant: 12 pF
  • Typical responsivity at 900 nm: 0.60 A/W
  • Typical responsivity at 1064 nm: 0.44 A/W
  • Typical responsivity at 1064 nm for -AR and -ARH suffix: 0.47 A/W
  • Typical rise time (50 Ω load): 12 ns
  • Maximal operating voltage: 180 V
  • Minimal breakdown voltage: 200 V
  • Typical capacitance per element: 2 pF
  • Maximal capacitance per element: 10 pF
  • Typical dark current per element: 10 nA
  • Maximal dark current per element: 50 nA
  • Typical noise current per element: 0.10 pA/√Hz
  • NEP at 900 nm per element: 0.10 pW/√Hz
  • NEP at 1064 nm per element: 0.15 pW/√Hz
  • Heater resistance at 25°C (-H suffix): 10 ±2 kΩ
  • Heater peak power (-H suffix): 4 W
  • Maximal heater DC voltage (-H suffix): 12 V
  • Package: TO-8 custom (hermetic)
  • Storage temperature range: -55 to 125 °C
  • Operating temperature range: -55 to 125 °C
  • Operating temperature range for -H suffix: -40 to 85 °C
  • Maximal heater voltage: 12 V


Typical applications
  • Position sensing and beam alignment at 1064 nm
  • Laser monitoring for pulsed and CW systems
  • Precision pointing with focused or defocused spots
  • Laboratory instrumentation and OEM integration


Ordering information
  • Base model: YAG-200-4
  • Suffix -AR: anti-reflection coating (improved responsivity)
  • Suffix -H or -ARH: integrated heater option for temperature control
  • Contact supplier for N- or P-type configuration and custom packaging

Catalogs

No catalogs are available for this product.

See all of Excelitas Technologies - PCO‘s catalogs

Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall B4 - Stand 302

  • More information

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