Wavelength-sensitive photodiode C30737LH-500-92N
avalancheLIDARsilicon

Wavelength-sensitive photodiode - C30737LH-500-92N - Excelitas Technologies - PCO - avalanche / LIDAR / silicon
Wavelength-sensitive photodiode - C30737LH-500-92N - Excelitas Technologies - PCO - avalanche / LIDAR / silicon
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Characteristics

Type
wavelength-sensitive, avalanche, LIDAR, silicon
Mounting
chip on carrier

Description

Product overview
The C30737LH-500-92N is a silicon avalanche photodiode (Si APD) featuring a 500 µm active diameter in a leadless ceramic carrier (LCC) with a 905 nm optical bandpass window and enhanced response near 900 nm. It is intended for photon detection in LiDAR, rangefinding and similar high-speed optical systems.

Key features
  • Active diameter: 500 µm
  • 905 nm optical bandpass filter for narrowband detection
  • Enhanced responsivity around 900 nm (60 A/W at 900 nm)
  • Low noise with noise current ~0.1 pA/√Hz
  • Fast temporal response: rise/fall time 0.9 ns (Rload = 50 Ω) and cut-off frequency ≈ 380 MHz
  • Available in leadless ceramic carrier (LCC) with 3×3 mm glass window

Applications
  • LiDAR and airborne/terrestrial ranging
  • Laser range-finding and time-of-flight sensors
  • Security and scanning systems
  • Cost-sensitive photodetection solutions requiring high-speed response

Specifications
Active Diameter: 500 µm
Peak Sensitivity Wavelength: 905 nm
Optical Window / Filter: 905 nm bandpass
Breakdown Voltage (Vbd): 180–260 V (binning available)
Temperature Coefficient of Vop (constant M): 1.3 V/°C
Gain: 100 at 900 nm
Responsivity: 60 A/W at 900 nm
Dark Current (Id): < 1.0 nA (typical 0.1 nA)
Noise Current: 0.1 pA/√Hz
Capacitance: 1 pF
Rise/Fall Time: 0.9 ns (Rload = 50 Ω)
Cut-off Frequency: 380 MHz
Storage Temperature: -50 °C to +100 °C
Operating Temperature: -40 °C to +85 °C
Package: 3×3 mm glass window in leadless ceramic carrier (LCC)

Technical specifications
  • Active diameter: 500 µm
  • Peak sensitivity wavelength: 905 nm
  • Breakdown voltage (Vbd): 180–260 V (binning available)
  • Temperature coefficient of Vop for constant M: 1.3 V/°C
  • Gain: 100 @ 900 nm
  • Responsivity: 60 A/W at 900 nm
  • Dark current (Id): < 1.0 nA (typical 0.1 nA)
  • Noise current: 0.1 pA/√Hz
  • Capacitance: 1 pF
  • Rise/Fall time: 0.9 ns (Rload = 50 Ω)
  • Cut-off frequency: 380 MHz
  • Storage temperature: -50 °C to +100 °C
  • Operating temperature: -40 °C to +85 °C
  • Package: 3×3 mm glass window, leadless ceramic carrier (LCC)
  • Optical window/filter: 905 nm bandpass

Catalogs

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Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall B4 - Stand 302

  • More information

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