Silicon photodiode C30737LH-500-81N
LIDARavalanchewavelength-sensitive

Silicon photodiode - C30737LH-500-81N - Excelitas Technologies - PCO - LIDAR / avalanche / wavelength-sensitive
Silicon photodiode - C30737LH-500-81N - Excelitas Technologies - PCO - LIDAR / avalanche / wavelength-sensitive
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Characteristics

Type
silicon, LIDAR, avalanche, wavelength-sensitive
Mounting
chip on carrier

Description

Product overview:
The Excelitas C30737LH-500-81N is a silicon avalanche photodiode (Si APD) with a 500 µm active diameter. Packaged in a leadless ceramic carrier (LCC) with a 3×3 mm glass window and a 635 nm optical bandpass filter, the device offers enhanced response at 800 nm and a frequency response above 1.3 GHz for high-speed detection.

Key features:
  • Active diameter: 500 µm
  • 635 nm optical bandpass filter for peak sensitivity
  • Enhanced responsivity at 800 nm
  • Low noise with fast rise/fall time (0.3 ns, Rload = 50 Ω)
  • High-frequency operation: cut-off ~1.3 GHz
  • Leadless ceramic carrier (LCC) with 3×3 mm glass window


Applications:
  • LiDAR and range-finding systems
  • Laser-based distance and speed measurement
  • Security and scanning systems
  • Cost-sensitive, high-performance optical detection


Specifications:
  • Part number: C30737LH-500-81N
  • Series: C30737
  • Brand: Excelitas
  • Active diameter: 500 µm
  • Peak sensitivity / filter: 635 nm bandpass; enhanced response at 800 nm
  • Breakdown voltage (Vbd): 120–210 V (binning available)
  • Gain: 100 @ 635 nm
  • Responsivity: 35 A/W at 900 nm
  • Dark current (Id): 0.1 < 1.0 nA
  • Noise current: 0.1 pA/√Hz
  • Capacitance: 2 pF
  • Rise/Fall time: 0.3 ns (R load = 50 Ω)
  • Cut-off frequency: 1.3 GHz
  • Operating temperature: -40 °C to +85 °C
  • Storage temperature: -50 °C to +100 °C
  • Package/window: 3×3 mm glass window in leadless ceramic carrier (LCC) with 635 nm filter


Technical details / specifications:
  • Part Number: C30737LH-500-81N
  • Series: C30737 series
  • Brand: Excelitas
  • Active diameter: 500 µm
  • Peak sensitivity / filter: 635 nm optical bandpass; optimized/enhanced response at 800 nm
  • Breakdown voltage (Vbd): 120–210 V (binning available)
  • Gain: 100 @ 635 nm
  • Responsivity: 35 A/W at 900 nm
  • Dark current: 0.1 < 1.0 nA
  • Noise current: 0.1 pA/√Hz
  • Capacitance: 2 pF
  • Rise/Fall time: 0.3 ns (R load = 50 Ω)
  • Bandwidth / cut-off frequency: 1.3 GHz
  • Package / window: 3×3 mm glass window in leadless ceramic carrier (LCC) with 635 nm filter
  • Operating temp: -40 °C to +85 °C; Storage temp: -50 °C to +100 °C

Catalogs

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Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall B4 - Stand 302

  • More information

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