Silicon photodiode
top viewwavelength-sensitiveinfrared

Silicon photodiode - Excelitas Technologies - PCO - top view / wavelength-sensitive / infrared
Silicon photodiode - Excelitas Technologies - PCO - top view / wavelength-sensitive / infrared
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Characteristics

Type
silicon, top view, wavelength-sensitive, infrared

Description

Overview
Our Fast-Response Silicon Photodiodes offer low-junction capacitance to achieve fast response times. They can be operated under reverse bias to decrease the capacitance and further increase the speed of response or in photovoltaic mode in applications where speed of response is not critical. With excellent response in the IR-spectral range, these devices are well-matched to Excelitas' Infrared LED VTE Series.

Product family
  • VTP1232FH - Si PD, T1 3/4 Flat, 2.326 mm2: The VTP1232FH is a silicon photodiode in a clear end-looking T1¾ flat package. This photodiode provides an enhanced response in the visible and near IR spectral range, and exhibits a very high shunt resistance, low dark current and low capacitance.
  • VTP1232H - Si PD, T1 3/4 Lensed, 2.326 mm2: The VTP1232H is a silicon photodiode in a clear end-looking T1¾ lensed package. The VTP1232H provides an enhanced response in the visible and near IR spectral range, and exhibits a very high shunt resistance, low dark current and low capacitance.
  • VTP3310LAH - Si PD, T1 Lensed, 0.684 mm2: The VTP3310LAH is a silicon photodiode in a clear end-looking long T1 lensed package. This photodiode provides an enhanced response in the visible and near IR spectral range, and exhibits a very high shunt resistance, low dark current and low capacitance.
  • VTP4085H - Si PD, Ceramic, 21mm2: The VTP4085H is a silicon photodiode on a ceramic substrate coated with epoxy which produces a fast response and low dark current.
  • VTP8440H - Si PD, Ceramic, 5.16 mm2: The VTP8440H is a silicon photodiode on 8 mm ceramic substrate coated with epoxy. With a wide field-of-view, this photodiode produces a fast response and a low dark current.

Documentation
  • Excelitas VTP Photodiodes General Characteristics (PDF)
  • Excelitas Fast-Response Silicon Photodiodes Application Note (PDF)

Technical specifications
  • Low junction capacitance for fast response times
  • Can be operated under reverse bias to decrease capacitance and increase speed of response
  • Can be used in photovoltaic mode when speed is not critical
  • Enhanced response in visible and near-IR spectral ranges; excellent IR response
  • Well-matched to Excelitas Infrared LED VTE Series
  • High shunt resistance and low dark current
  • Low capacitance maintained across available package types
  • Available packages include: T1 3/4 flat, T1 3/4 lensed, long T1 lensed, ceramic substrate with epoxy coating
  • Typical active area examples from family: 2.326 mm2, 0.684 mm2, 21 mm2, 5.16 mm2

Catalogs

No catalogs are available for this product.

See all of Excelitas Technologies - PCO‘s catalogs

Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall B4 - Stand 302

  • More information

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