UV photodiode C30739ECERH

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Product Overview
The C30739ECERH is a short-wavelength Si avalanche photodiode (Si APD) in a flat ceramic carrier. It covers approximately 400–700 nm with an enhanced UV response and quantum efficiency >70% at 430 nm. Designed for low-light-level detection, the ceramic package simplifies mechanical coupling to scintillators such as LSO and BGO and is suitable for medical imaging and radiation detection systems.

Features & Benefits

• Si APD with enhanced UV response
• Quantum efficiency >70% at 430 nm
• Flat ceramic package for straightforward scintillator coupling
• Non-magnetic package suitable for sensitive detection environments

Applications

• Molecular imaging
• Nuclear medicine detectors
• Fluorescence detection
• High-energy physics instrumentation
• Radiation safety monitoring
• Environmental radiation monitoring

Technical specifications

• Active Area: 5.6×5.6 mm
• Breakdown Voltage: 400, <450 V
• Capacitance: 60 pF
• Dark Current: 1.5 nA
• Gain: >100
• Noise Current:
• Response Time: 2 ns
• Responsivity: 26 A/W for C30739ECERH, 52 A/W for C30739ECERH-2 at 430 nm (typical gain)
• Rise/Fall Time: 2 ns
• Spectral Noise Current: 0.3 pA/√Hz for C30739ECERH, 0.4 pA/√Hz for C30739ECERH-2
• Wavelength Range: 400–700 nm