Avalanche photodiode (APD) module LLAM-1060E-R8BH

Product Overview
The LLAM-1060E-R8BH high-speed, low-light analog avalanche photodiode (APD) receiver module incorporates a 1060 nm silicon (Si) APD with a 0.8 mm active diameter and a 200 MHz bandwidth. A thermoelectric cooler stabilizes detector temperature for reduced noise and consistent responsivity.

Series Description
The LLAM Series integrates an avalanche photodiode chip, thermoelectric (TE) cooler, and preamplifier in a hermetically sealed modified 12-lead TO-66 flange package. Fully RoHS-compliant, the module provides additional heat-sinking capability and straightforward installation. TE cooling ensures lower noise and stable responsivity across a 5°C to 40°C ambient range. The LLAM Series is engineered for detection of high-speed, low-light analog signals. Excelitas InGaAs LLAM-1060E and -1550E preamplifier modules are designed with improved damage thresholds for greater resilience at high optical power densities. The LLAM-1060E-R8BH includes the Excelitas C30954EH APD.

Applications

• Laser-range finding
• Target recognition
• Distributed temperature sensing (DTS)
• Confocal microscopy
• Analytical instrumentation
• High-speed free-space optical communication

Performance Table
30 — 90 fW/√Hz at 830 nm
25 — 80 fW/√Hz at 900 nm
50 — 150 fW/√Hz at 1064 nm

Specifications / Technical characteristics

• Model: LLAM-1060E-R8BH
• Detector type: Silicon (Si) avalanche photodiode (APD), 1060 nm
• Included APD: Excelitas C30954EH
• Active diameter: 0.8 mm
• Bandwidth: 200 MHz
• Package: modified 12-lead TO-66 flange, hermetically sealed
• Thermal control: Thermoelectric (TE) cooler for lower noise and stable responsivity over 5°C to 40°C ambient
• Integrated preamplifier included
• RoHS-compliant
• Designed for detection of high-speed, low-light analog signals
• Improved damage threshold characteristics (noted for InGaAs LLAM-1060E and -1550E preamplifier modules)
• Noise performance examples: 90 fW/√Hz at 830 nm; 80 fW/√Hz at 900 nm; 150 fW/√Hz at 1064 nm