Avalanche photodiode (APD) module C30659-1550E-R2AH

Product overview
The C30659-1550E-R2AH is a compact receiver module integrating an InGaAs avalanche photodiode (APD) and a hybrid preamplifier in a hermetically sealed TO-8 package. It incorporates an Excelitas C30662EH InGaAs APD optimized at 1550 nm with a 200 µm active area and a design tolerant to higher optical input levels (high-damage threshold). The integrated preamplifier provides ultra-low-noise operation for sensitive detection applications.

Design
The C30659 Series uses an inverting amplifier topology with an emitter follower as an output buffer stage. The preamplifier front end is a very low-noise GaAs FET designed for higher transimpedance than Excelitas' standard C30950 Series. The InGaAs detectors deliver strong spectral response from 830 nm to 1550 nm with fast rise and fall times across the range. The module is designed for standard ±5 V amplifier supply voltages.

Technical specifications

• System bandwidth: 50 MHz
• Ultra-low noise equivalent power (NEP): 150 fW/√Hz at 1300 nm
• Ultra-low noise equivalent power (NEP): 130 fW/√Hz at 1550 nm
• Spectral response: peak at 1550 nm (830–1550 nm range)
• Typical power consumption: 150 mW
• Amplifier operating voltages: ±5 V
• AC load capability: 50 Ω (AC-coupled)
• Hermetically sealed TO-8 package
• High reliability and suitability for high-optical-power environments