Wavelength-sensitive photodiode VTB8441BH

silicon

Product summary
The VTB8441BH is a blue-enhanced silicon photodiode in an 8 mm recessed ceramic package with a clear epoxy protective layer. A built-in IR rejection filter limits response to the visible spectrum. The device offers very high shunt resistance and very low dark current, optimized for precision light measurement in industrial sensing applications.

Details
The VTB8441BH provides a 5.16 mm² active area and is intended primarily for photovoltaic operation, although it can be used with a small reverse bias. Its high shunt resistance minimizes offset in high-gain transimpedance amplifier circuits, improving accuracy in low-light and wide-dynamic-range measurements.

Features & Benefits

• Visible spectral range (IR rejection)
• 1%–2% linearity over 7 to 9 decades
• Very low dark current for improved low-light performance
• Very high shunt resistance to reduce offset in TIA circuits
• RoHS compliant

Applications

• Ambient light sensing and control
• Precision light meters and photometry
• Flame and combustion monitoring
• Industrial optical sensors and instrumentation

Characteristics / Technical specifications

• Active area = 5.16 mm²
• Short-circuit current = Min. 4 µA at 100 fc, 2850 K
• Dark current = Max. 100 pA at 2 V reverse bias
• Junction capacitance = Typ. 1.0 nF at 0 V bias
• Spectral range = 330 nm to 720 nm
• Peak spectral response = 580 nm
• Sensitivity at peak wavelength = Typ. 0.29 A/W
• Angular response = ±50° at 50% response