Wavelength-sensitive photodiode VTH2120

siliconchip on carrier

Product overview The VTH2120 silicon photodiode in chip form features a 100 mm² (10×10 mm) active area and a low-capacitance design optimized for alpha-particle detection such as radon monitoring. Its radiation-robust chip construction minimizes absorption from window assemblies, increasing responsivity to particles of interest. The device provides spectral response from 400 nm to 1100 nm, with a peak at 940 nm and typical sensitivity of 0.70 A/W. Packaging options include waffle pack or Mylar (preferred). A smaller variant is available as the VTH2110 (5×5 mm).

Specifications

• Active area: 100 mm² (10×10 mm)
• Dark current: ≤ 5 nA at 20 V reverse bias
• Junction capacitance: ≤ 120 pF at 20 V reverse bias
• Spectral range: 400 nm – 1100 nm
• Peak spectral response: 940 nm
• Sensitivity at peak wavelength: typ. 0.70 A/W
• Breakdown voltage: > 100 V

Applications

• Radon detection
• Alpha particle detection
• Ambient light sensing

Technical features

• Form factor: chip
• Low capacitance design for improved signal performance
• High responsivity to alpha particles due to windowless chip design
• Available packaging: waffle pack or Mylar
• Alternate smaller model: VTH2110 (5×5 mm)