Infrared photodiode C30902EH-2

avalancheLIDARsilicon

Product overview
Excelitas C30902EH series silicon avalanche photodiodes (APDs) are high-speed, large-area reach-through detectors offering high responsivity with low noise for low-light applications. The C30902EH-2 is supplied in a TO-18 package with a flat glass window and a 905 nm optical filter; the photosensitive active diameter is 0.5 mm. A SPAD variant (C30902SH) is also available for single-photon counting in Geiger mode.

Key technical description
The devices use a double-diffused reach-through structure providing strong responsivity from 400 nm to 1000 nm and fast rise/fall times. Responsivity remains essentially constant up to typically 800 MHz modulation. The detector chip is hermetically sealed in a modified TO-18 housing. Typical avalanche gains exceed 150 for applications requiring higher sensitivity.

Features & Benefits

• 0.5 mm Si APD in TO-18 housing
• High quantum efficiency — typically 60% at 905 nm
• Low dark noise at room temperature
• High responsivity with internal avalanche gains >150
• Spectral response centered on 860–960 nm
• Fast time response — typically 0.4 ns
• Operating temperature range −40°C to +85°C

Applications

• LiDAR and ToF measurements
• Optical Time-Domain Reflectometry (OTDR)
• Small-signal fluorescence detection
• Laser scanning and ranging systems

Technical specifications

• Active area: 0.2 mm²
• Active diameter: 0.5 mm
• Breakdown voltage: typ. 225 V
• Capacitance: 1.5 pF
• Temperature coefficient: typ. 0.7 V/°C
• Dark current: 7 nA
• Dark noise: 0.1 pA/√Hz
• Noise equivalent power: 1.23 fW/√Hz
• Typical responsivity: 66 A/W at 905 nm
• Recommended gain: 150
• Package: TO-18, flat window, 905 nm filter