Top view photodiode C30737MH-230-80N

siliconLIDARavalanche

Product overview: The C30737MH-230-80N Silicon Avalanche Photodiode (Si APD) offers enhanced sensitivity at 800 nm with a 230 µm active diameter in a leadless laminated carrier (LLC) package. It is engineered for high-speed optical detection where low noise and GHz-range bandwidth are required.

Key features:

• High responsivity across 500–1000 nm, peak at 800 nm
• Low noise with fast rise times and frequency response above 1.5 GHz
• 230 µm active diameter optimized for 800 nm
• Leadless laminated carrier (LLC) option – MH variant

Applications:

• LiDAR and time-of-flight sensing
• Laser range-finding and distance measurement
• Security and scanning systems
• Cost-sensitive high-performance detector applications

Technical specifications:

• Active diameter: 230 µm
• Peak sensitivity wavelength: 800 nm
• Breakdown voltage (Vbd): 120–210 V (binning available)
• Temperature coefficient of Vop for constant M: 0.5 V/°C
• Gain: 100 @ 800 nm
• Responsivity: 50 A/W @ 800 nm
• Dark current (Id): 0.05–0.5 nA
• Noise current: 0.1 pA/√Hz
• Capacitance: 1 pF
• Rise/fall time: 0.2 ns (Rload = 50 Ω)
• Cut-off frequency: 1.5 GHz
• Storage temperature: -50 °C to +100 °C
• Operating temperature: -40 °C to +85 °C
• Package: 2 x 1.75 mm top-looking FR4 epoxy, leadless laminated carrier (LLC)