Avalanche photodiode (APD) module C30817EH

Description
The C30817EH Silicon Avalanche Photodiode (Si APD) is a general-purpose, high-speed detector built on a double-diffused reach-through structure. It delivers high responsivity across the 400–1100 nm spectral range, fast rise and fall times (~2 ns), and a fall-time characteristic without tail, maintaining consistent responsivity for modulation frequencies up to approximately 200 MHz. The device is hermetically sealed behind a flat glass window in a modified low-profile TO-5 package; active area diameter: 0.8 mm.

Key Features

• High quantum efficiency
  • 85% typical at 900 nm
  • 18% typical at 1060 nm
• Spectral response: 400–1100 nm
• Fast time response: rise and fall time typically 2 ns
• Fall time with no tail — stable performance at high modulation rates
• Hermetic low-profile TO-5 package with flat glass window

Applications

• Laser detection and monitoring
• Optical ranging and LIDAR subsystems
• Optical communications and receivers
• High-speed switching and pulsed measurements
• Transit-time and timing measurements

Specifications

• Responsivity: 75 A/W at 900 nm
• Responsivity: 18 A/W at 1060 nm

Technical specifications

• Model: C30817EH
• Detector type: Silicon Avalanche Photodiode (Si APD)
• Active spectral range: 400–1100 nm
• Active area diameter: 0.8 mm
• Quantum efficiency: 85% typical at 900 nm; 18% typical at 1060 nm
• Responsivity: 75 A/W at 900 nm; 18 A/W at 1060 nm
• Time response: rise and fall time typically 2 ns; fall time without tail
• Modulation frequency: responsivity stable up to ~200 MHz
• Package: modified low-profile TO-5, hermetically sealed behind flat glass window