Infrared photodiode C30737LH-230-80N

wavelength-sensitivesiliconLIDAR

Product overview
The C30737LH-230-80N silicon avalanche photodiode (Si APD) is optimized for enhanced response at 800 nm. It features a 230 µm active diameter and is supplied in a leadless ceramic carrier (LCC), making it suitable for compact optical detector assemblies.

Key features

• High responsivity across 500–1000 nm with peak performance at 800 nm
• Low dark noise and very fast rise times; frequency response above 1.5 GHz
• Active diameter: 230 µm, optimized for 800 nm
• Leadless ceramic carrier (LCC) package for compact integration

Applications

• LiDAR systems
• Laser range-finding
• Security and scanning detectors
• Cost-sensitive, high-performance optical detection modules

Technical specifications

• Active diameter: 230 µm
• Peak sensitivity wavelength: 800 nm
• Breakdown voltage (Vbd): 120–210 V (binning available)
• Temperature coefficient of Vop for constant M: 0.5 V/°C
• Gain: 100 @ 800 nm
• Responsivity: 50 A/W at 800 nm
• Dark current Id: 0.05–<0.5 nA
• Noise current: 0.1 pA/√Hz
• Capacitance: 1 pF
• Rise/Fall time: 0.2 ns (R load = 50 Ω)
• Cut-off frequency: 1.5 GHz
• Storage temperature: -50 °C to +100 °C
• Operating temperature: -40 °C to +85 °C
• Package: 3 × 3 mm glass window, leadless ceramic carrier (LCC)
• Window: Standard