Wavelength-sensitive photodiode C30737PH-500-80N

LIDARavalancheinfrared

Product Overview:
The C30737PH-500-80N Silicon Avalanche Photodiode (APD) offers a 500 µm active diameter and enhanced sensitivity at 800 nm in a Plastic T 1¾ through-hole package. It is designed for fast response and low-noise detection in compact, cost-effective assemblies.

Key Features:

• Optimized responsivity across 500–1000 nm with peak at 800 nm
• Low noise and fast rise times with frequency response above 1.3 GHz
• 500 µm active diameter for efficient light collection
• Plastic T 1¾ through-hole package (PH option)

Applications:

• LiDAR systems
• Laser range-finding and distance measurement
• Security and scanning instruments
• Cost-sensitive photodetection assemblies requiring fast, sensitive detectors

Technical specifications:

• Active Diameter: 500 µm
• Peak Sensitivity Wavelength: 800 nm
• Breakdown Voltage (Vbd): 120–210 V (binning available)
• Temperature Coefficient of Operating Voltage for Constant Gain: 0.5 V/°C
• Gain: 100 @ 800 nm
• Responsivity: 50 A/W at 800 nm
• Dark Current (Id): <1 nA (typ. 0.1 nA)
• Noise Current: 0.1 pA/√Hz
• Capacitance: 2 pF
• Rise/Fall Time: 0.3 ns (Rload = 50 Ω)
• Cut-off Frequency: 1.3 GHz
• Storage Temperature: -50 °C to +100 °C
• Operating Temperature: -40 °C to +85 °C
• Package: Plastic T 1¾ through-hole