Avalanche photodiode (APD) module C30659-1550-R08BH

Overview
The C30659 Series InGaAs APD receiver combines an InGaAs avalanche photodiode with a hybrid low-noise preamplifier in a hermetically sealed TO-8 package. The C30659-1550-R08BH variant integrates an Excelitas C30645EH InGaAs APD optimized for 1550 nm, delivering fast response and low noise for fiber-optic and instrumentation applications.

Design and Operation
The receiver uses an inverting amplifier topology with an emitter-follower output buffer. A GaAs FET front end in the preamplifier provides very low noise and higher transimpedance compared with standard designs, supporting reliable signal conditioning up to the specified bandwidth.

Detector Details
The series employs Si or InGaAs APDs depending on the variant. The C30659-1550-R08BH contains the Excelitas C30645EH InGaAs APD. Detectors exhibit strong responsivity from ~830 nm to 1550 nm with fast rise/fall times, making the module suitable for high-speed optical detection at 1550 nm.

Key features

• System bandwidth: 200 MHz
• Ultra-low NEP:
  • 250 fW/√Hz at 1300 nm
  • 220 fW/√Hz at 1550 nm
• Spectral response: peak at 1550 nm
• Typical power consumption: 150 mW
• Amplifier supply: ±5 V
• Output: 50 Ω AC-coupled load capability
• Hermetically sealed TO-8 package
• Included detector: Excelitas C30645EH InGaAs APD (optimized for 1550 nm)

Technical specifications

• System bandwidth: 200 MHz
• NEP: 250 fW/√Hz at 1300 nm; 220 fW/√Hz at 1550 nm
• Spectral response: peak at 1550 nm; response from ~830 nm to 1550 nm
• Typical power consumption: 150 mW
• Amplifier operating voltages: ±5 V
• Output: 50 Ω AC load capability (AC-coupled)
• Package: hermetically sealed TO-8
• Included detector in this variant: Excelitas C30645EH InGaAs APD (optimized for 1550 nm)
• Design notes: inverting amplifier with emitter-follower output buffer; GaAs FET low-noise front end for higher transimpedance