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Avalanche photodiode C30954EHsiliconLIDARwavelength-sensitive
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Characteristics
- Type
- avalanche, silicon, LIDAR, wavelength-sensitive, infrared
Description
Product overview
The C30954EH long-wavelength Silicon Avalanche Photodiode (Si APD) delivers a 0.8 mm active-area diameter with enhanced quantum efficiency at 1060 nm. Implemented in a TO-5 metal-can package, the device uses a double-diffused "reach-through" structure to extend response beyond 900 nm while maintaining standard APD operating characteristics.
Key features
Applications
Mechanical & package
Datasheet & ordering
The C30954EH long-wavelength Silicon Avalanche Photodiode (Si APD) delivers a 0.8 mm active-area diameter with enhanced quantum efficiency at 1060 nm. Implemented in a TO-5 metal-can package, the device uses a double-diffused "reach-through" structure to extend response beyond 900 nm while maintaining standard APD operating characteristics.
Key features
- 0.8 mm active area diameter
- Enhanced quantum efficiency near 1060 nm
- Long-wavelength response >900 nm
- Double-diffused "reach-through" structure
- TO-5 metal-can package
Applications
- Fiber-optic receivers and transceivers
- Optical communications at extended wavelengths
- Rangefinders and LIDAR sensors
- Laboratory instrumentation and photon detection
Mechanical & package
- Standard TO-5 lead configuration for PCB or socket mounting
- Hermetic metal-can style suitable for optical assemblies
Datasheet & ordering
- Part number: C30954EH
- Refer to the manufacturer's datasheet for electrical characteristics, biasing and temperature limits
- Contact distributor for availability and packaging options
Catalogs
No catalogs are available for this product.
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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