Product OverviewThe C30617L-100 is an InGaAs PIN photodiode with a 100 μm active-diameter chip housed in a ceramic SMD package with window. It provides high quantum efficiency from 960 nm to 1700 nm, low capacitance for extended bandwidth and high shunt resistance for improved sensitivity, linearity and uniformity (≤2%) across the active area.
Applications- High-volume consumer applications
- Telecommunication
- Instrumentation
- High-speed switches
- Optical time reference for laser range finders
- LiDAR
Features & Benefits- Bandwidth up to 3.5 GHz
- High responsivity at 1300 nm and 1550 nm
- Active area diameter: 100 μm
- Low capacitance (Typ. 0.6 pF)
- Compact ceramic SMD package with window
- Customizable (e.g. optical filters)
- RoHS compliant
Technical specifications- Breakdown Voltage: 60 V
- Operating Voltage: 5 V
- Capacitance: Typ. 0.6 pF
- Dark Current: Typ. <1.0 nA
- Dark Noise: Typ. <0.03 pA/√Hz
- Package: Ceramic SMD with window
- Wavelength range / High quantum efficiency: 960 nm to 1700 nm
- High responsivity at 1300 nm and 1550 nm
- Responsivity: Typ. 1.05 A/W @ 1550 nm
- Rise / Fall Time: Typ. 0.07 ns
- Active area diameter: 100 μm
- Linearity and uniformity: ≤2% across active area