Avalanche photodiode (APD) module C30659-900-R8AH

Avalanche photodiode (APD) module - C30659-900-R8AH - Excelitas Technologies - PCO
Avalanche photodiode (APD) module - C30659-900-R8AH - Excelitas Technologies - PCO
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Description

Overview
The C30659 Series of hybrid optical APD receivers integrates a Silicon (Si) avalanche photodiode (APD) and a hybrid preamplifier in a hermetically sealed TO-8 package. The C30659-900-R8AH uses the C30817EH Si APD with peak responsivity at 900 nm and a 0.8 mm active diameter, providing sensitive detection across the visible–near IR range.

Design and performance
The Excelitas C30659 Series employs an inverting amplifier topology with an emitter-follower output buffer. The preamplifier uses a low-noise GaAs FET front end designed for higher transimpedance than the standard C30950 Series. The Si APDs match those used in C30817EH, C30902EH, C30954EH and C30956EH; InGaAs APDs are used in C30645EH and C30662EH. Devices deliver fast rise and fall times across wavelengths and reliable response from 400 to 1100 nm.

Applications / Notes
Hybrid integration of APD and preamplifier in a hermetically sealed TO-8 package enables low-noise detection suitable for high-sensitivity optical detection systems requiring fast response and low NEP. Typical applications include optical instrumentation, spectroscopy, and fiber-optic receiver front ends.

Characteristics / technical specifications
  • System bandwidth: 50 MHz
  • Low noise equivalent power (NEP):
    • 14 fW/√Hz at 830 nm
    • 12 fW/√Hz at 900 nm
  • Spectral response range: 400 to 1100 nm
  • Active diameter: 0.8 mm
  • Typical power consumption: 150 mW
  • Amplifier operating voltages: ±5 V
  • 50 Ω AC load capability (AC-coupled)
  • Hermetically sealed TO-8 package
  • High reliability

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Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall B4 - Stand 302

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