Silicon photodiode VTB8441H

infraredUVwavelength-sensitive

Product overview
The VTB8441H is a blue‑enhanced silicon photodiode housed in an 8 mm recessed ceramic package with a clear epoxy protection. It delivers an enhanced response in the blue spectral range, very high shunt resistance and low dark current. The device features a 5.16 mm² active area and a spectral response from 320 nm to 1100 nm. Designed as a P-on-N silicon planar photodiode, it is optimized for visible light and intended primarily for photovoltaic operation, with the option of a small reverse bias for specific applications. Its high shunt resistance minimizes offsets in high‑gain transimpedance amplifier circuits.

Features & Benefits

• UV to near‑IR spectral range
• 1%–2% linearity over 7 to 9 decades
• Very low dark current
• Very high shunt resistance
• RoHS compliant

Applications

• UV and blue light sensing
• Light meters
• Flame monitoring
• Photometry

Technical specifications

• Active area = 5.16 mm²
• Spectral range = 320 nm to 1100 nm
• Peak spectral response = 920 nm
• Sensitivity at peak wavelength = Typical 0.5 A/W
• Short circuit current = Minimum 35 µA at 100 fc, 2850 K
• Dark current = Maximum 100 pA at 2 V reverse bias
• Junction capacitance = Typical 1.0 nF at 0 V bias
• Angular response = ±50° at 50% response
• Package = 8 mm recessed ceramic package with clear epoxy protection
• Construction = P-on-N silicon planar photodiode, blue‑enhanced coating, very high shunt resistance, low dark current