Wavelength-sensitive photodiode C30739ECERH-2

siliconUVavalanche

Product Overview
The C30739ECERH-2 short-wavelength, enhanced silicon avalanche photodiode (Si APD) covers a spectral range from <400 nm to >700 nm. Designed for low-light medical imaging and radiation detection, it delivers low noise, high gain and low capacitance with an enhanced UV response (quantum efficiency >70% at 430 nm). The flat ceramic carrier package enables reliable handling and direct coupling to scintillation crystals such as LSO and BGO; the non-magnetic package supports use in medically sensitive environments.

Features & Benefits

• Si APD with enhanced UV response for improved sensitivity at 430 nm
• Quantum efficiency >70% at 430 nm
• Flat ceramic carrier package for easy coupling to scintillators (LSO, BGO)
• Low capacitance and low noise suitable for low-light and timing applications
• Non-magnetic package compatible with medical imaging environments

Applications

• Molecular imaging (PET detectors, scintillator coupling)
• Nuclear medicine instrumentation
• Fluorescence detection and low-light photometry
• High-energy physics detectors
• Radiation safety and environmental monitoring

Technical specifications

• Active area: 5.6 x 5.6 mm
• Breakdown voltage: ~400 V (<450 V)
• Capacitance: 60 pF
• Dark current: 1.5 nA
• Gain: >100
• Noise current: (not specified)
• Response time: 2 ns
• Rise/Fall time: 2 ns
• Responsivity: 26 A/W for C30739ECERH; 52 A/W for C30739ECERH-2 at 430 nm (typical gain)
• Spectral noise current: 0.3 pA/√Hz for C30739ECERH; 0.4 pA/√Hz for C30739ECERH-2
• Wavelength / Spectral range: typically 400–700 nm (coverage <400 nm to >700 nm)