Silicon photodiode VTP9812FH

wavelength-sensitive

Product overview
The VTP9812FH silicon photodiode is supplied in an infrared-blocking T-1¾ flat package. It features a 1.548 mm² active area and a spectral response tailored to the visible range (400–700 nm), with a peak at 580 nm. The device offers very low dark current, high shunt resistance and low junction capacitance for fast response. It can be operated under reverse bias to reduce capacitance and increase speed, or used in photovoltaic mode where high speed is not required.

Features & benefits

• Spectral response close to the human eye (visible range)
• 1–2% linearity across 7–9 decades
• Low dark current
• High shunt resistance
• Low junction capacitance for fast response
• High reverse voltage rating
• RoHS compliant

Applications

• Interior and exterior light sensing and switching
• Automotive headlight dimming systems
• Display contrast control
• Energy-saving lighting controls

Technical specifications

• Active area: 1.548 mm²
• Short-circuit current: Min. 0.7 µA at 100 fc, 2850 K
• Dark current: Max. 10 nA at 10 V reverse bias
• Junction capacitance: Max. 150 pF at 10 V reverse bias
• Spectral range: 400 nm to 700 nm
• Peak spectral response: 580 nm
• Sensitivity at peak wavelength: Typ. 0.034 A/W
• Angular response: ±50° at 50% response
• Soldering temperature: Max. 260°C