Infrared photodiode C30737PH-500-90N

wavelength-sensitiveavalanchesilicon

Product overview
The C30737PH-500-90N silicon avalanche photodiode (Si APD) offers a 500 µm active diameter and is optimized for enhanced response at 900 nm. Supplied in a Plastic T 1¾ through-hole package, the device combines high responsivity and fast temporal response for optical detection applications.

Key features

• High responsivity across 500–1000 nm, with peak performance near 900 nm
• Low noise and very fast rise times; frequency response above 380 MHz
• 500 µm active diameter optimized for near‑infrared detection
• Plastic T 1¾ through-hole package (PH option)

Applications

• LiDAR systems
• Laser range-finding
• Security and scanning equipment
• Cost-sensitive applications requiring high-performance photodetection

Specifications

• Active diameter: 500 µm
• Peak sensitivity wavelength: 900 nm
• Breakdown voltage Vbd: 180–260 V (binning available)
• Temperature coefficient of Vop for constant M: 1.3 V/°C
• Gain: 100 @ 900 nm
• Responsivity: 60 A/W at 800 nm
• Dark current Id: <1 nA
• Noise current: 0.1 pA/√Hz
• Capacitance: 1 pF
• Rise/fall time: 0.9 ns (Rload = 50 Ω)
• Cut-off frequency: 380 MHz
• Storage temperature: -50 °C to +100 °C
• Operating temperature: -40 °C to +85 °C
• Package: Plastic T 1¾ through-hole

Technical specifications

• Active diameter: 500 µm
• Peak sensitivity wavelength: 900 nm
• Breakdown voltage Vbd: 180–260 V (binning available)
• Temperature coefficient of Vop for constant M: 1.3 V/°C
• Gain: 100 @ 900 nm
• Responsivity: 60 A/W at 800 nm
• Dark current Id: <1 nA
• Noise current: 0.1 pA/√Hz
• Capacitance: 1 pF
• Rise/fall time: 0.9 ns (Rload = 50 Ω)
• Cut-off frequency: 380 MHz
• Storage temperature: -50 °C to +100 °C
• Operating temperature: -40 °C to +85 °C
• Package: Plastic T 1¾ through-hole