Avalanche photodiode (APD) module C30659-UV-1

Overview
The C30659-UV-1 integrates a UV-enhanced silicon avalanche photodiode (Si APD) and a hybrid preamplifier in a hermetically sealed TO-8 package to enable ultra-low-noise detection in UV-sensitive applications.

Details
The UV-enhanced Si APDs offer strong responsivity from 400 nm to 950 nm with fast rise and fall times across the spectrum. The module's preamplifier uses a very low-noise GaAs FET front end engineered for higher transimpedance compared with the standard C30950 Series, improving signal amplification for low-light measurements.

Technical characteristics / specifications

• System bandwidth: 50 MHz
• Ultra low noise equivalent power (NEP): 10 fW/√Hz at 500 nm
• Spectral response range: 400 to 950 nm
• Typical power consumption: 150 mW
• Amplifier operating voltages: ±5 V
• 50 Ω AC load capability (AC-coupled)
• Hermetically sealed TO-8 package
• High reliability