Silicon photodiode C30845EH

infraredquadrantwavelength-sensitive

Product overview
The C30845EH is an N-type silicon PIN quadrant photodiode in a hermetically sealed TO-8 package, optimized for operation across broad near-UV to near-IR wavelengths. The large active area (50 mm², 8 mm diameter) enables reliable position sensing from both focused and defocused spots in pulsed or CW operation.

Features

• Large photosensitive surface area: 50 mm²
• Low operating voltage (Vop): 45 V
• Hermetically sealed TO-8 packages
• Spectral response range: 400 to 1100 nm (designed 300 to 1100 nm)
• Very low quadrant-to-quadrant separation: 0.25 mm

Applications / Notes
N-type PIN quadrant photodiode in a TO-8 hermetic package suitable for broadband, low-light-level detection and for extracting position information from focused or defocused spots in pulsed or continuous-wave systems.

Technical specifications

• Active diameter (mm): 8
• Active area (mm²): 50
• Minimal Breakdown Voltage (V): 100
• Typical capacitance per element (pF): 8
• Maximal capacitance per element (pF): 10
• Typical dark current per element at 10 V (nA): 70
• Maximal dark current per element at 10 V (nA): 200
• Typical dark current per element at 45 V (nA): 200
• Maximal dark current per element at 45 V (nA): 700
• Typical noise current per element at 900 nm (pA/√Hz): 0.43
• Maximal noise current per element at 900 nm (pA/√Hz): 1.80
• Typical noise current per element at 1060 nm (pA/√Hz): 1.5
• Maximal noise current per element at 1060 nm (pA/√Hz): 6.5
• Typical rise time (ns): 6
• Typical fall time (ns): 10
• Storage temperature (°C): -60 to 100
• Operating temperature (°C): -40 to 80